Wenshen Li

β-Gallium oxide power electronics

Andrew J. Green, James S. Speck, Grace Xing et al. · APL Materials · 2022 · 462 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +17

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang et al. · Nature · 2022 · 320 citations · Full text

Oxide Heterostructures, Electrical Engineering, Engineering +5

Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV

Zongyang Hu, Kazuki Nomoto, Wenshen Li et al. · IEEE Electron Device Letters · 2018 · 300 citations

Materials Engineering, Electrical Engineering, Engineering +14

Field-Plated Ga₂O₃ Trench Schottky Barrier Diodes With a BV²/$R_{\text{on,sp}}$ of up to 0.95 GW/cm²

Wenshen Li, Kazuki Nomoto, Zongyang Hu et al. · IEEE Electron Device Letters · 2019 · 283 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode <i>β</i>-Ga2O3 vertical transistors

Zongyang Hu, Kazuki Nomoto, Wenshen Li et al. · Applied Physics Letters · 2018 · 161 citations

Premature Transistor Breakdown, Electrical Engineering, Transistor Channels +14