B. Brar

SiO 2 film thickness metrology by x-ray photoelectron spectroscopy

Zhaoming Lu, J. P. McCaffrey, B. Brar et al. · Applied Physics Letters · 1997 · 225 citations

Materials Science, Semiconductors, Electrical Engineering +13

A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt et al. · IEEE Journal of Solid-State Circuits · 1998 · 220 citations

Resonant-tunneling Diodes, Data Converter, Mixed-signal Integrated Circuit +6

Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field

Richard J. Warburton, C. Gauer, A. Wixforth et al. · Physical review. B, Condensed matter · 1996 · 95 citations

Charge Excitations, Engineering, Cavity Qed +19

Interband impact ionization by terahertz illumination of InAs heterostructures

Andrea Markelz, N. G. Asmar, B. Brar et al. · Applied Physics Letters · 1996 · 87 citations

Engineering, Physics, Optical Properties +13

An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

J.B. Hacker, J. Bergman, G. Nagy et al. · IEEE Microwave and Wireless Components Letters · 2004 · 79 citations