Mitsuaki Shimizu

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Masahiro Horita, Shinya Takashima, Ryo Tanaka et al. · Japanese Journal of Applied Physics · 2017 · 98 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

Shuichi Yagi, Mitsuaki Shimizu, Masaki Inada et al. · Solid-State Electronics · 2006 · 96 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

Kazunobu Kojima, Shinya Takashima, Masaharu Edo et al. · Applied Physics Express · 2017 · 87 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

Shinya Takashima, Katsunori Ueno, Hideaki Matsuyama et al. · Applied Physics Express · 2017 · 85 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy

Xu‐Qiang Shen, Mitsuaki Shimizu, Hajime Okumura · Japanese Journal of Applied Physics · 2003 · 73 citations

Materials Engineering, Materials Science, Aln Films +14