Publication | Closed Access
High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator
96
Citations
9
References
2006
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringAluminum Gallium NitrideApplied PhysicsGan Power DeviceTio2 Gate Insulator
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