Nakao Akutsu

An analysis of temperature dependent photoluminescence line shapes in InGaN

K. L. Teo, John S. Colton, Peifeng Yu et al. · Applied Physics Letters · 1998 · 110 citations

Engineering, Materials Engineering, Materials Science +17

High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

Shuichi Yagi, Mitsuaki Shimizu, Masaki Inada et al. · Solid-State Electronics · 2006 · 96 citations

Engineering, Electrical Engineering, Materials Science +12

GaN growth on 150-mm-diameter (111) Si substrates

Akinori Ubukata, Kazutada Ikenaga, Nakao Akutsu et al. · Journal of Crystal Growth · 2006 · 73 citations

Engineering, Materials Engineering, Materials Science +14

Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

K. Jeganathan, Mitsuaki Shimizu, Hajime Okumura et al. · Journal of Crystal Growth · 2007 · 54 citations

Engineering, Materials Science, Physics +17

Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

Osamu Makino, Koichi Nakamura, Akitomo Tachibana et al. · Applied Surface Science · 2000 · 33 citations

Natural Sciences, Materials Engineering, Materials Science +14