GaN growth on 150-mm-diameter (111) Si substrates

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu, Shintaro Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1991 · 296 citations

Materials Science, Materials Engineering, Electrical Engineering +9

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

Lucia Romano, Chris G. Van de Walle, Joel W. Ager et al. · Journal of Applied Physics · 2000 · 245 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +13

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guangyuan Zhao, Naoyuki Nakada et al. · Japanese Journal of Applied Physics · 1999 · 202 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Hongmei Wang, Jianping Zhang, Changqing Chen et al. · Applied Physics Letters · 2002 · 187 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 138 citations

Electrical Engineering, Engineering, Applied Physics +2