Akira Yamaguchi

GaN growth on 150-mm-diameter (111) Si substrates

Akinori Ubukata, Kazutada Ikenaga, Nakao Akutsu et al. · Journal of Crystal Growth · 2006 · 73 citations

Electrical Engineering, Engineering, Gan Growth +2

Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements

Kouhei Kawakami, T. Nakano, Akira Yamaguchi · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2016 · 25 citations

Wide-bandgap Semiconductor, Engineering, Optical Properties +16

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system

Akinori Ubukata, Yoshiki Yano, Hayato Shimamura et al. · Journal of Crystal Growth · 2012 · 23 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

High growth rate metal organic vapor phase epitaxy GaN

Koh Matsumoto, Hiroki Tokunaga, Akinori Ubukata et al. · Journal of Crystal Growth · 2008 · 23 citations

Materials Engineering, Electrical Engineering, Engineering +3

Comparative study of surface recombination in hexagonal GaN and ZnO surfaces

Takeyoshi Onuma, Naoyuki Sakai, T. Igaki et al. · Journal of Applied Physics · 2012 · 22 citations

Surface Band Bending, Engineering, Optoelectronic Devices +16