Koh Matsumoto

An analysis of temperature dependent photoluminescence line shapes in InGaN

K. L. Teo, John S. Colton, Peifeng Yu et al. · Applied Physics Letters · 1998 · 110 citations

Engineering, Optoelectronic Devices, Luminescence Property +16

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Dennis Christy, Takashi Egawa, Yoshiki Yano et al. · Applied Physics Express · 2013 · 100 citations

Wide-bandgap Semiconductor, Mm Silicon, Electrical Engineering +11

Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

Joseph J. Freedsman, Takashi Egawa, Yuya Yamaoka et al. · Applied Physics Express · 2014 · 81 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Quantum chemical study of parasitic reaction in III–V nitride semiconductor crystal growth

Koichi Nakamura, Osamu Makino, Akitomo Tachibana et al. · Journal of Organometallic Chemistry · 2000 · 77 citations

Semiconductors, Semiconductor Technology, Engineering +9

GaN growth on 150-mm-diameter (111) Si substrates

Akinori Ubukata, Kazutada Ikenaga, Nakao Akutsu et al. · Journal of Crystal Growth · 2006 · 73 citations

Electrical Engineering, Engineering, Gan Growth +2