Joseph J. Freedsman

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.2K citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

Joseph J. Freedsman, Takashi Egawa, Yuya Yamaoka et al. · Applied Physics Express · 2014 · 81 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

Joseph J. Freedsman, Toshiharu Kubo, Takashi Egawa · IEEE Transactions on Electron Devices · 2013 · 65 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Trap characterization of <i>in-situ</i> metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

Joseph J. Freedsman, Toshiharu Kubo, Takashi Egawa · Applied Physics Letters · 2011 · 53 citations

Semiconductors, Aluminium Nitride, Electrical Engineering +13

Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

Joseph J. Freedsman, Anri Watanabe, Yuya Yamaoka et al. · physica status solidi (a) · 2015 · 43 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16