Toshiharu Kubo

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

Joseph J. Freedsman, Toshiharu Kubo, Takashi Egawa · IEEE Transactions on Electron Devices · 2013 · 65 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Trap characterization of <i>in-situ</i> metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

Joseph J. Freedsman, Toshiharu Kubo, Takashi Egawa · Applied Physics Letters · 2011 · 53 citations

Semiconductors, Aluminium Nitride, Electrical Engineering +13

Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

Joseph J. Freedsman, Anri Watanabe, Yuya Yamaoka et al. · physica status solidi (a) · 2015 · 43 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Electrical properties of GaN-based metal–insulator–semiconductor structures with Al₂O₃deposited by atomic layer deposition using water and ozone as the oxygen precursors

Toshiharu Kubo, Joseph J. Freedsman, Yasuhiro Iwata et al. · Semiconductor Science and Technology · 2014 · 40 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +13

Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films

Kazuya Banno, Masaya Mizuno, Kazuhisa Fujita et al. · Applied Physics Letters · 2013 · 36 citations

Engineering, Transfer-free Graphene Synthesis, Graphene Nanomeshes +16