Akinori Ubukata

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Dennis Christy, Takashi Egawa, Yoshiki Yano et al. · Applied Physics Express · 2013 · 100 citations

Wide-bandgap Semiconductor, Mm Silicon, Electrical Engineering +11

Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

Joseph J. Freedsman, Takashi Egawa, Yuya Yamaoka et al. · Applied Physics Express · 2014 · 81 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

GaN growth on 150-mm-diameter (111) Si substrates

Akinori Ubukata, Kazutada Ikenaga, Nakao Akutsu et al. · Journal of Crystal Growth · 2006 · 73 citations

Electrical Engineering, Engineering, Gan Growth +2

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system

Akinori Ubukata, Yoshiki Yano, Hayato Shimamura et al. · Journal of Crystal Growth · 2012 · 23 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

High growth rate metal organic vapor phase epitaxy GaN

Koh Matsumoto, Hiroki Tokunaga, Akinori Ubukata et al. · Journal of Crystal Growth · 2008 · 23 citations

Materials Engineering, Electrical Engineering, Engineering +3