Concepedia

Hayato Shimamura

HS

3

Publications

138

Citations

3

H-Index

2012

Active since

Affiliations

Nagoya Institute of Technology(Current)

Hayato Shimamura is an author at Nagoya Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringThin FilmsSemiconductorsSurface ScienceMaterial ScienceElectronic DevicesMaterials Engineering

Publications per year

2012–2013

3

Publications

3

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Dennis Christy, Takashi Egawa, Yoshiki Yano et al. · Applied Physics Express · 2013 · 100 citations

Wide-bandgap Semiconductor, Mm Silicon, Electrical Engineering +11

High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system

Akinori Ubukata, Yoshiki Yano, Hayato Shimamura et al. · Journal of Crystal Growth · 2012 · 23 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool

Yoshiki Yano, Hiroki Tokunaga, Hayato Shimamura et al. · Japanese Journal of Applied Physics · 2013 · 15 citations

Materials Science, Materials Engineering, Semiconductors +13

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