Hiroki Tokunaga

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Dennis Christy, Takashi Egawa, Yoshiki Yano et al. · Applied Physics Express · 2013 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

Guanxi Piao, Kazutada Ikenaga, Yoshiki Yano et al. · Journal of Crystal Growth · 2016 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +8

Quantum chemical mechanism in parasitic reaction of AlGaN alloys formation

Osamu Makino, Koichi Nakamura, Akitomo Tachibana et al. · Applied Surface Science · 2000 · 33 citations

Natural Sciences, Materials Engineering, Materials Science +14

III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel

Kazuo Uchida, Hiroki Tokunaga, Yoshiaki Inaishi et al. · MRS Proceedings · 1996 · 26 citations

Engineering, Materials Engineering, Materials Science +10

High growth rate metal organic vapor phase epitaxy GaN

Koh Matsumoto, Hiroki Tokunaga, Akinori Ubukata et al. · Journal of Crystal Growth · 2008 · 24 citations

Engineering, Materials Engineering, Materials Science +10