Tsuneo Ogura

Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device

Wataru Saito, Ichiro Omura, Tsuneo Ogura et al. · Solid-State Electronics · 2004 · 131 citations

Engineering, Electrical Engineering, Materials Science +12

Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · Japanese Journal of Applied Physics · 2004 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Critical IGBT Design Regarding EMI and Switching Losses

Masanori Tsukuda, Ichiro Omura, Yoko Sakiyama et al. · 2008 · 25 citations

Engineering, Electrical Engineering, Microelectronics +15

Direct photo emission motion observation of current filaments in the IGBT under avalanche breakdown condition

Koichi Endo, Shinji Nagamine, Wataru Saito et al. · 2016 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

High switching speed trench diode for 1200V RC-IGBT based on the concept of Schottky Controlled injection (SC)

Ryohei Gejo, Tsuneo Ogura, Shinichiro Misu et al. · 2016 · 16 citations

Engineering, Electrical Engineering, Materials Science +15