Yorito Kakiuchi

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Transactions on Electron Devices · 2007 · 223 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta et al. · IEEE Electron Device Letters · 2010 · 125 citations

Wide-bandgap Semiconductor, Fp Edge, Electrical Engineering +12

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi et al. · IEEE Electron Device Letters · 2008 · 125 citations

Electrical Engineering, Demonstrated Circuit, Engineering +9

On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage

Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Electron Device Letters · 2007 · 52 citations

Wide-bandgap Semiconductor, High-electron Mobility Transistor, Electrical Engineering +15

Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi et al. · International Symposium on Power Semiconductor Devices and IC's · 2010 · 17 citations

Electrical Engineering, High Voltage Gan-hemts, Engineering +14