Concepedia

Yorito Kakiuchi

YK

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Publications

6

Citations

561

H-Index

6

Active since

2007

Affiliations

Toshiba (Japan)(Current)

Yorito Kakiuchi is an author at Toshiba (Japan) specializing in current collapse, engineering, and semiconductor devices.

Publications per year

2007–2010

6

Publications

6

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Transactions on Electron Devices · 2007 · 227 citations

Engineering, Electrical Engineering, Materials Science +17

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta et al. · IEEE Electron Device Letters · 2010 · 126 citations

Engineering, Electrical Engineering, Materials Science +12

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi et al. · IEEE Electron Device Letters · 2008 · 125 citations

Engineering, Electrical Engineering, Energy Materials +16

On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage

Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Electron Device Letters · 2007 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi et al. · International Symposium on Power Semiconductor Devices and IC's · 2010 · 17 citations

Engineering, Electrical Engineering, Materials Science +11

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