IEEE Electron Device Letters · 2007 · 52 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesField-effect TransistorsIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCurrent CollapseElectrical Resistance ModulationGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGallium Nitride Power ElectronicsHigh-electron-mobility TransistorsSemiconductor Device Characterization
The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating substrates, no field-plate (FP) effect was expected and the ON-resistance increases of these devices were larger than those on an n-SiC substrate even with the same source-FP structure. The dual-FP structure, which was a combination of gate FP and source FP, was effective in suppressing the ON -resistance increase due to minimization of the gate-edge electric field concentration. The ON-resistance after the applied voltage of 250 V decreased by twice that at low drain voltage by the dual-FP structure. Gallium nitride (GaN), high-electron mobility transistor (HEMT), high voltage, power semiconductor device.
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10-W/mm AlGaN-GaN HFET with a field modulating plate
Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto et al. · IEEE Electron Device Letters · 2003 · 274 citations
Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2004 · 91 citations