Yuji Ando - Concepedia

Author

Yuji Ando

NEC (Japan)ORCID

Also Known As

Ando, Y., Y Ando, Y. Ando, Yoshinori Ando, Yuji Ando

174

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

NEC (Japan)National Institute of Advanced Industrial Science and Technology Nagoya University Renesas Electronics (Japan)Toyoda Gosei (Japan)

About

Yuji Ando is an author at NEC (Japan) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	52	2.2K
2	Applied Physics	23	42	1.9K
3	Natural Sciences	1	1	10
4	Biomedical Engineering	1	1	43
5	Chemistry	1	1	11

Yuji Ando

Publications

2.4K

Citations

H-Index

Page 1

	Year	Citations
Calculation of transmission tunneling current across arbitrary potential barriers Yuji Ando, Tomohiro Itoh Journal of Applied Physics EngineeringVarious Potential BarriersPower ElectronicsElectromagnetic CompatibilityElectron Physic	1987	481
10-W/mm AlGaN-GaN HFET with a field modulating plate Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringFp ElectrodeApplied Physics	2003	271
Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate Yasuhiro Okamoto, Yuji Ando, K. Hataya, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorField-modulating PlateElectrical EngineeringEngineeringRf Semiconductor	2004	112
A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique K. Ota, Kazuhiko Endo, Yasuhiro Okamoto, Wide-bandgap SemiconductorSemiconductor TechnologyElectrical Engineering¿Piezo Neutralization Technique¿Engineering	2009	92
Effects of postmetallization annealing on interface properties of Al<sub>2</sub>O<sub>3</sub>/GaN structures Tamotsu Hashizume, Shota Kaneki, Tatsuya Oyobiki, Applied Physics Express	2018	90
High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorField-modulating PlateElectrical EngineeringGain LossEngineering	2004	64
Analysis of charge control in pseudomorphic two-dimensional electron gas field-effect transistors Yuji Ando, Tetsuji Itoh IEEE Transactions on Electron Devices Device ModelingSemiconductorsElectrical EngineeringElectronic DevicesCharge Control	1988	56
30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs Takafumi Inoue, Yuji Ando, Hiroyuki Miyamoto, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringSmall-signal CharacterizationDelay-time AnalysisEngineering	2005	56
Improved operation stability of Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates Yuji Ando, Shota Kaneki, Tamotsu Hashizume Applied Physics Express Wide-bandgap SemiconductorElectrical EngineeringGan SubstratesEngineeringElectronic States	2019	53
DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics Yuji Ando, Tetsuji Itoh IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringElectronic Engineering	1990	49

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