Concepedia

Shota Kaneki

SK

11

Publications

540

Citations

11

H-Index

2016

Active since

Affiliations

Hokkaido University(Current)

Nagoya University

Sumitomo Chemical (Japan)

Hitachi (Japan)

Fujitsu (Japan)

Shota Kaneki is an author at Hokkaido University specializing in applied physics, electrical engineering, and engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringSemiconductorsPhysicsMaterial ScienceCrystalline DefectsCondensed Matter PhysicsNanoelectronicsSurface Science

Publications per year

2016–2024

11

Publications

11

State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Tamotsu Hashizume, Kenya Nishiguchi, Shota Kaneki et al. · Materials Science in Semiconductor Processing · 2017 · 146 citations · Full text

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Shota Kaneki, Joji Ohira, Shota Toiya et al. · Applied Physics Letters · 2016 · 96 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Low-state-density Al2o3/gan Interfaces +16

Effects of postmetallization annealing on interface properties of Al<sub>2</sub>O<sub>3</sub>/GaN structures

Tamotsu Hashizume, Shota Kaneki, Tatsuya Oyobiki et al. · Applied Physics Express · 2018 · 90 citations · Full text

High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas

Hiromichi Ohta, Sung Wng Kim, Shota Kaneki et al. · Advanced Science · 2017 · 69 citations · Full text

Improved operation stability of Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates

Yuji Ando, Shota Kaneki, Tamotsu Hashizume · Applied Physics Express · 2019 · 53 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +9

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