Shota Kaneki

State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Tamotsu Hashizume, Kenya Nishiguchi, Shota Kaneki et al. · Materials Science in Semiconductor Processing · 2017 · 146 citations · Full text

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Shota Kaneki, Joji Ohira, Shota Toiya et al. · Applied Physics Letters · 2016 · 96 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Low-state-density Al2o3/gan Interfaces +16

Effects of postmetallization annealing on interface properties of Al₂O₃/GaN structures

Tamotsu Hashizume, Shota Kaneki, Tatsuya Oyobiki et al. · Applied Physics Express · 2018 · 90 citations · Full text

High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas

Hiromichi Ohta, Sung Wng Kim, Shota Kaneki et al. · Advanced Science · 2017 · 69 citations · Full text

Improved operation stability of Al₂O₃/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates

Yuji Ando, Shota Kaneki, Tamotsu Hashizume · Applied Physics Express · 2019 · 53 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +9