Concepedia

Kenya Nishiguchi

KN

8

Publications

435

Citations

8

H-Index

2013

Active since

Affiliations

Hokkaido University(Current)

Fujitsu (Japan)

Kenya Nishiguchi is an author at Hokkaido University specializing in engineering, electrical engineering, and applied physics.

ORCID

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Publications per year

2013–2020

8

Publications

8

State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Tamotsu Hashizume, Kenya Nishiguchi, Shota Kaneki et al. · Materials Science in Semiconductor Processing · 2017 · 146 citations · Full text

Effects of postmetallization annealing on interface properties of Al<sub>2</sub>O<sub>3</sub>/GaN structures

Tamotsu Hashizume, Shota Kaneki, Tatsuya Oyobiki et al. · Applied Physics Express · 2018 · 90 citations · Full text

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Kota Ohi, Joel T. Asubar, Kenya Nishiguchi et al. · IEEE Transactions on Electron Devices · 2013 · 85 citations · Full text

, , +10

Current linearity and operation stability in Al<sub>2</sub>O<sub>3</sub>-gate AlGaN/GaN MOS high electron mobility transistors

Kenya Nishiguchi, Syota Kaneki, Shiro Ozaki et al. · Japanese Journal of Applied Physics · 2017 · 60 citations · Full text

Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

M. Matys, Shota Kaneki, Kenya Nishiguchi et al. · Journal of Applied Physics · 2017 · 19 citations

, , +12

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