Kenya Nishiguchi - Concepedia

Author

Kenya Nishiguchi

Hokkaido University ORCID

Also Known As

K Nishiguchi, K. Nishiguchi, Kenya Nishiguchi, Nishiguchi, K.

Publications

464

Citations

H-Index

Concepts

All Affiliations

Hokkaido University Fujitsu (Japan)

About

Kenya Nishiguchi is an author at Hokkaido University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	3	3	116
2	Applied Physics	3	3	116
3	Electrical Engineering	3	3	116
4	Physics	1	1	19
5	Condensed Matter Physics	1	1	19

Kenya Nishiguchi

Publications

435

Citations

H-Index

Page 1

	Year	Citations
State of the art on gate insulation and surface passivation for GaN-based power HEMTs Tamotsu Hashizume, Kenya Nishiguchi, Shota Kaneki, Materials Science in Semiconductor Processing	2017	146
Effects of postmetallization annealing on interface properties of Al<sub>2</sub>O<sub>3</sub>/GaN structures Tamotsu Hashizume, Shota Kaneki, Tatsuya Oyobiki, Applied Physics Express	2018	90
Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs Kota Ohi, Joel T. Asubar, Kenya Nishiguchi, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringCurrent StabilityNanoelectronics	2013	85
Current linearity and operation stability in Al<sub>2</sub>O<sub>3</sub>-gate AlGaN/GaN MOS high electron mobility transistors Kenya Nishiguchi, Syota Kaneki, Shiro Ozaki, Japanese Journal of Applied Physics	2017	60
Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors M. Matys, Shota Kaneki, Kenya Nishiguchi, Journal of Applied Physics Threshold Voltage InstabilitiesWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2017	19
Improved DC performance and current stability of ultrathin-Al <sub>2</sub> O <sub>3</sub> /InAlN/GaN MOS-HEMTs with post-metallization-annealing process Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Semiconductor Science and Technology	2020	13
Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al<sub>2</sub>O<sub>3</sub> Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Applied Physics Express SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2017	12
Evaluation of off-bias-stress induced surface charging at AlGaN/GaN surface using a dual-gate transistor structure Kenya Nishiguchi, Joel T. Asubar, Tamotsu Hashizume Japanese Journal of Applied Physics	2014	10

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