Kota Ohi

Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

Kota Ohi, Tamotsu Hashizume · Japanese Journal of Applied Physics · 2009 · 93 citations

Wide-bandgap Semiconductor, Engineering, Mmc Hemts +16

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Kota Ohi, Joel T. Asubar, Kenya Nishiguchi et al. · IEEE Transactions on Electron Devices · 2013 · 85 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Ultra low miller capacitance trench-gate IGBT with the split gate structure

Kota Ohi, Yoshihiro Ikura, A. Yoshimoto et al. · 2015 · 35 citations

Electrical Engineering, Engineering, Power Device +11

Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation

Naohisa Harada, Yujin Hori, N. Azumaishi et al. · Applied Physics Express · 2011 · 27 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Hole path concept for low switching loss and low EMI noise with high IE-effect

M. Sawada, Yusuke Sakurai, Kota Ohi et al. · 2017 · 25 citations