M. Matys

On the origin of interface states at oxide/III-nitride heterojunction interfaces

M. Matys, B. Adamowicz, Alina Domanowska et al. · Journal of Applied Physics · 2016 · 50 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +21

Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures

M. Matys, R. Stoklas, J. Kuzmı́k et al. · Journal of Applied Physics · 2016 · 29 citations

Wide-bandgap Semiconductor, Engineering, Al Content +17

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement

M. Matys, B. Adamowicz, Tamotsu Hashizume · Applied Physics Letters · 2012 · 26 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Photocapacitance–light Intensity Measurement +16

Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

M. Matys, Shota Kaneki, Kenya Nishiguchi et al. · Journal of Applied Physics · 2017 · 19 citations

Threshold Voltage Instabilities, Wide-bandgap Semiconductor, Electrical Engineering +12

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al₂O₃/AlGaN/GaN by photocapacitance method

M. Matys, B. Adamowicz, Yuichi Hori et al. · Applied Physics Letters · 2013 · 17 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12