K. Hataya

Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate

Yasuhiro Okamoto, Yuji Ando, K. Hataya et al. · IEEE Transactions on Microwave Theory and Techniques · 2004 · 116 citations

Engineering, Electrical Engineering, Microelectronics +16

High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate

Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama et al. · IEEE Transactions on Electron Devices · 2004 · 66 citations

Engineering, Electrical Engineering, Microelectronics +16

30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs

Takafumi Inoue, Yuji Ando, Hiroyuki Miyamoto et al. · IEEE Transactions on Microwave Theory and Techniques · 2005 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Low-contact-resistance and smooth-surface Ti∕Al∕Nb∕Au ohmic electrode on AlGaN∕GaN heterostructure

Tatsuo Nakayama, Hiroyuki Miyamoto, Yuji Ando et al. · Applied Physics Letters · 2004 · 34 citations

Natural Sciences, Materials Engineering, Materials Science +17

12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET

Yuji Ando, Yasuhiro Okamoto, K. Hataya et al. · 2004 · 27 citations

Engineering, Electrical Engineering, Materials Science +17