K. Tsuda

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

Engineering, Electrical Engineering, Materials Engineering +17

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Transactions on Electron Devices · 2007 · 227 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2005 · 151 citations

Engineering, Electrical Engineering, Materials Science +17

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Wataru Saito, Tomohiro Nitta, Yorito Kakiuchi et al. · IEEE Electron Device Letters · 2008 · 125 citations

Engineering, Electrical Engineering, Energy Materials +16

Design Optimization of High Breakdown Voltage AlGaN–GaN Power HEMT on an Insulating Substrate for<tex>$R_rm ONAhbox --V_B$</tex>Tradeoff Characteristics

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada et al. · IEEE Transactions on Electron Devices · 2004 · 91 citations

Engineering, Electrical Engineering, Materials Science +17