A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor

Abstract

This paper proposes a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices. A developed simple analytical one dimensional model can predict a sufficiently accurate current voltage curve and clarifies a new design criterion for IEGT operation. A fabricated 4500 V IEGT realized a 2.5 V forward voltage drop at 100 A/cm/sup 2/. The IEGT had a current density over ten times that of conventional trench gate IGBT at 2.5 V forward voltage drop. An operation mode of IEGT has been theoretically and experimentally confirmed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>