PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of · 2015 · 88 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationSemiconductor Device MaterialsSemiconductor ReliabilityWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsPower MosfetsSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon Carbide Power ElectronicsSolid-state TransformersTransistors For Power ConversionWide Bandgap Semiconductor Applications
For the first time, we present the full characteristics of a newer generation 10kV, 340mOmega SiC MOSFET and 10kV, 15A SiC diode chip set and discuss target applications. The 8.1mm x 8.1mm 10kV SiC MOSFET die was measured to have record low specific RDSON of 100mOmega- cm2 at 25deg C, 15A current rating, and only 6.5mJ total switching energy when switched at 6kV, 15A, 150deg C. The accompanying anti-parallel 10kV diode chip has the same die size, a 25% reduction from previous efforts. This new class of 10kV SiC die is targeted for several new applications, including solid state transformers utilizing a 7.2kV or 4.16kV line-voltage.