Sarah K. Haney

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Anant Agarwal, Fatima Husna, Sarah K. Haney et al. · IEEE Electron Device Letters · 2007 · 282 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

Sarit Dhar, Sarah K. Haney, Lin Cheng et al. · Journal of Applied Physics · 2010 · 118 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

Trinity Biggerstaff, C. L. Reynolds, Tsvetanka Zheleva et al. · Applied Physics Letters · 2009 · 91 citations

Electrical Engineering, Material Analysis, Engineering +15

A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching

Mrinal K. Das, Q. Jon Zhang, Robert Callanan et al. · Materials science forum · 2008 · 55 citations

Engineering, Power Electronics, Semiconductor Device +16

Critical Issues for MOS Based Power Devices in 4H-SiC

Sei‐Hyung Ryu, Sarit Dhar, Sarah K. Haney et al. · Materials science forum · 2009 · 46 citations

Electrical Engineering, Critical Issues, Engineering +11