Sei‐Hyung Ryu

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

John W. Palmour, Lin Cheng, Vipindas Pala et al. · 2014 · 282 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Anant Agarwal, Fatima Husna, Sarah K. Haney et al. · IEEE Electron Device Letters · 2007 · 282 citations

Electrical Engineering, Semiconductor Device, Engineering +13

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

Ty McNutt, Allen R. Hefner, H. Alan Mantooth et al. · IEEE Transactions on Power Electronics · 2007 · 244 citations

Device Modeling, Electrical Engineering, Sic Devices +12

SiC Power Devices for Microgrids

Qingchun Zhang, Robert Callanan, Mrinal K. Das et al. · IEEE Transactions on Power Electronics · 2010 · 174 citations

Electrical Engineering, Engineering, Dc Microgrids +12

1800 V NPN bipolar junction transistors in 4H-SiC

Sei‐Hyung Ryu, Anant Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters · 2001 · 161 citations

Electrical Engineering, Engineering, Physics +11