Ty McNutt - Concepedia

Author

Ty McNutt

University of Arkansas at Fayetteville

Also Known As

McNutt, Ty, T. McNutt, T. R. McNutt, T.R. McNutt, TY McNUTT, Ty McNutt, Ty Mcnutt, Ty R. McNutt

107

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

University of Arkansas at Fayetteville Arkansas Power Electronics International National Institute of Standards and Technology Wolfspeed, Inc. (United States)Northrop Grumman (United States)

About

Ty McNutt is an author at University of Arkansas at Fayetteville specializing in electrical engineering, engineering, and power electronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	38	1.8K
2	Electrical Engineering	21	38	1.8K
3	Applied Physics	12	15	758
4	Computer Engineering	7	7	202
5	Physics	1	1	40

Ty McNutt

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices Bret Whitaker, Adam Barkley, Zach Cole, IEEE Transactions on Power Electronics High DensityElectric BatteryElectrical EngineeringEngineeringPower Device	2013	418
Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence Ty McNutt, Allen R. Hefner, H. Alan Mantooth, IEEE Transactions on Power Electronics Device ModelingElectrical EngineeringSic DevicesEngineeringPower Device	2007	244
Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments Jared Homberger, Alexander B. Lostetter, K.J. Olejniczak, Electrical EngineeringEngineeringPower DevicePower DevicesApplied Physics	2004	161
The next generation of high voltage (10 kV) silicon carbide power modules Brandon Passmore, Zach Cole, Brad McGee, Low-power ElectronicsElectrical EngineeringNext GenerationEngineeringPower Module	2016	99
Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator Ty McNutt, Allen R. Hefner, H. Alan Mantooth, IEEE Transactions on Power Electronics Device ModelingElectrical EngineeringEngineeringReverse-recovery Switching WaveformsPower Device	2004	71
A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications Ranjan Lamichhane, Nance Ericsson, S.S. Frank, Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringGate Driver	2014	61
Silicon carbide power MOSFET model and parameter extraction sequence Ty McNutt, Allen R. Hefner, Alan Mantooth, Device ModelingElectrical EngineeringPower MosfetEngineeringPower Device	2004	51
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Steven Buchoff, Stephen Van Campen, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringSub XmlnsEngineering	2008	44
A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit Victor Veliadis, Megan Snook, Ty McNutt, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2008	43
A technique to increase the efficiency of high-voltage charge pumps Mohammad Rashedul Hoque, Toqeer Ahmad, Ty McNutt, IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing Low-power ElectronicsMosfet Body DiodeElectrical EngineeringCharge Transfer SwitchEngineering	2006	42

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