Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

TLDR

The paper reviews the current state of SiC semiconductor research at Arkansas Power Electronics International and the University of Arkansas, focusing on modeling and characterization for high‑temperature applications. The authors aim to review SiC device applications in deep‑earth drilling and combat electric vehicles, describe APEI’s motor‑drive development, and propose transferring the technology to NASA space exploration. The study examines SiC Schottky diodes, MOSFETs, and static‑induction transistors, evaluates their use in deep‑earth drilling and combat electric vehicles, and identifies NASA probes, landers, and lightweight spacecraft power converters as target applications.

Abstract

This paper discusses the current state of SiC electronics research at Arkansas Power Electronics International, Inc. (APEI) with regard to high-temperature environments and applications. The University of Arkansas (UA) researchers' modeling and characterization of SiC power devices for these high-temperature environments are also discussed. Devices to be covered include SiC Schottky diodes, SiC power MOSFETs, and SiC static-induction-transistors (SITs). The paper reviews the current application of these devices to the specific harsh environments of deep Earth drilling and combat electric vehicles, as well as outline APEI's research work into developing operational SiC motor drives for these systems. It is proposed that this technology development be transferred to NASA space exploration applications. Two areas within the NASA program that would find this technology highly beneficial are (1) probes and landers that must operate in high-temperature environments and (2) ultra-lightweight power electronics for satellite and spacecraft power converter systems.