Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator

Abstract

Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the temperature dependence of the on-state characteristics, and the di/dt, dv/dt, and temperature dependence of the reverse-recovery characteristics. The model results are presented for 1500 V SiC Merged PiN Schottky (MPS) diodes, 600 V Schottky diodes, and 5000 V SiC PiN diodes. The devices studied have current ratings from 0.25 A to 5 A and have different lifetimes resulting in different switching energy versus on-state voltage trade-offs. The devices are characterized using a previously reported test system specifically designed to emulate a wide range of application conditions by independently controlling the applied diode voltage, forward diode current, di/dt, and dv/dt at turn-off. A behavioral model of the test system is implemented to simulate and validate the models. The models are validated for a wide range of application conditions for which the diode could be used.