Q. Jon Zhang

A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching

Mrinal K. Das, Q. Jon Zhang, Robert Callanan et al. · Materials science forum · 2008 · 55 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

SiC MOSFET Reliability Update

Mrinal K. Das, Sarah K. Haney, Jim Richmond et al. · Materials science forum · 2012 · 40 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

Q. Jon Zhang, Charlotte Jonas, Joseph J. Sumakeris et al. · Materials science forum · 2008 · 32 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Development of Large Area (up to 1.5 cm<sup>2</sup>) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

Brett Hull, Joseph J. Sumakeris, Michael O’Loughlin et al. · Materials science forum · 2008 · 32 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

12 kV, 1 cm<sup>2</sup> SiC GTO Thyristors with Negative Bevel Termination

Q. Jon Zhang, Anant Agarwal, Craig Capell et al. · Materials science forum · 2012 · 25 citations · Full text

Engineering, Electrical Engineering, Materials Science +14