Charlotte Jonas

22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation

Edward Van Brunt, Scott T. Allen, Albert A. Burk et al. · 2014 · 77 citations

Engineering, Improved Conductivity Modulation, Power Electronic Systems +16

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

Sei‐Hyung Ryu, Craig Capell, Charlotte Jonas et al. · 2012 · 71 citations

Buffer Layer Design, Electrical Engineering, Chip Size +12

Design and Characterization of High-Voltage 4H-SiC p-IGBTs

Qingchun Zhang, Alex Q. Huang, Jun Wang et al. · IEEE Transactions on Electron Devices · 2008 · 56 citations

Semiconductor Technology, Electrical Engineering, High-voltage 4H-sic P-igbts +11

A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching

Mrinal K. Das, Q. Jon Zhang, Robert Callanan et al. · Materials science forum · 2008 · 55 citations

Engineering, Power Electronics, Semiconductor Device +16

Development of 15 kV 4H-SiC IGBTs

Sei‐Hyung Ryu, Lin Cheng, Sarit Dhar et al. · Materials science forum · 2012 · 52 citations

Electrical Engineering, Engineering, High Voltage Engineering +10