Craig Capell

10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

Mrinal K. Das, Craig Capell, David Grider et al. · 2011 · 221 citations

Electrical Engineering, Engineering, Majority Carrier Domain +14

1000-V, 30-A 4H-SiC BJTs with high current gain

Sumi Krishnaswami, Anant Agarwal, Sei‐Hyung Ryu et al. · IEEE Electron Device Letters · 2005 · 84 citations

Electrical Engineering, Engineering, Bipolar Junction Transistor +8

22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation

Edward Van Brunt, Scott T. Allen, Albert A. Burk et al. · 2014 · 77 citations

Engineering, Improved Conductivity Modulation, Power Electronic Systems +16

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

Sei‐Hyung Ryu, Craig Capell, Charlotte Jonas et al. · 2012 · 71 citations

Buffer Layer Design, Electrical Engineering, Chip Size +12

A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching

Mrinal K. Das, Q. Jon Zhang, Robert Callanan et al. · Materials science forum · 2008 · 55 citations

Engineering, Power Electronics, Semiconductor Device +16