10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

TLDR

SiC MOSFETs and Schottky diodes have extended the majority carrier domain of power semiconductor devices to 10 kV. A 10 kV half H‑bridge module was built from 24 MOSFETs and 12 Schottky diodes, enabling 120 A per switch while preserving die‑level performance. The modules show excellent static and dynamic behavior with promising reliability, enabling a 13.8 kV solid‑state substation that operates at 855 kVA with 97 % efficiency, and soft‑switching at 20 kHz that cuts weight by 70 % and size by 50 % compared to a 60 Hz transformer.

Abstract

The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. The devices exhibit excellent static and dynamic properties with encouraging preliminary reliability. Twenty-four MOSFETs and twelve Schottky diodes have been assembled in a 10 kV half H-bridge power module to increase the current handling capability to 120 A per switch without compromising the die-level characteristics. For the first time, a custom designed system (13.8 kV to 465/√3 V solid state power substation) has been successfully demonstrated with these state of the art SiC modules up to 855 kVA operation and 97% efficiency. Soft-switching at 20 kHz, the SiC enabled SSPS represents a 70% reduction in weight and 50% reduction in size when compared to a 60 Hz conventional, analog transformer.