Mahbuba Sultana

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

Fatima Husna, M. Lachab, Mahbuba Sultana et al. · IEEE Transactions on Electron Devices · 2012 · 93 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

D. V. Morgan, Mahbuba Sultana, Fatima Husna et al. · Applied Physics Express · 2011 · 28 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Transport properties of SiO₂/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate

M. Lachab, Mahbuba Sultana, Q. Fareed et al. · Journal of Physics D Applied Physics · 2014 · 22 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO₂gate dielectric

M. Lachab, Mahbuba Sultana, V. Adivarahan et al. · Semiconductor Science and Technology · 2012 · 16 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11