Q. Fareed

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Jianping Zhang, H. M. Wang, Mikhail Gaevski et al. · Applied Physics Letters · 2002 · 198 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +15

AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Hongmei Wang, Jianping Zhang, Changqing Chen et al. · Applied Physics Letters · 2002 · 187 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Jianping Zhang, M. Asif Khan, Wenhong Sun et al. · Applied Physics Letters · 2002 · 132 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +18

Near-band-edge photoluminescence of wurtzite-type AlN

E. Kuokštis, Jianping Zhang, Q. Fareed et al. · Applied Physics Letters · 2002 · 107 citations

Semiconductors, Materials Science, Aluminium Nitride +13

Terahertz detection by GaN/AlGaN transistors

A. El Fatimy, Stéphane Boubanga Tombet, F. Teppe et al. · Electronics Letters · 2006 · 105 citations

Resonant Response, Electrical Engineering, Terahertz Technology +14