Nitek (United States)

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

Fatima Husna, M. Lachab, Mahbuba Sultana et al. · IEEE Transactions on Electron Devices · 2012 · 94 citations

Engineering, Electrical Engineering, Materials Science +17

Ohmic Contact to High-Aluminum-Content AlGaN Epilayers

Surendra Srivastava, Seong Mo Hwang, Monirul Islam et al. · Journal of Electronic Materials · 2009 · 27 citations

Engineering, Materials Engineering, Materials Science +9

MOCVD growth of semipolar Al_<i>x</i>Ga_1−<i>x</i>N on <i>m</i>‐plane sapphire for applications in deep‐ultraviolet light emitters

K. Balakrishnan, M. Lachab, Hung‐Chi Chen et al. · physica status solidi (a) · 2011 · 27 citations

Engineering, Materials Engineering, Materials Science +17

Transport properties of SiO₂/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate

M. Lachab, Mahbuba Sultana, Q. Fareed et al. · Journal of Physics D Applied Physics · 2014 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

ITER Dynamic Tritium Inventory Modeling Code

I. Cristescu, L. Dörr, A. Busigin et al. · Fusion Science & Technology · 2005 · 21 citations

Engineering, Nuclear Engineering, Systems Engineering +14