T. Wang

Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures

Jie Bai, T. Wang, Shiro Sakai · Journal of Applied Physics · 2000 · 138 citations

Wide-bandgap Semiconductor, Engineering, Quantum-well Thickness +17

Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes

T. Wang, Jie Bai, Shigeki Sakai et al. · Applied Physics Letters · 2001 · 107 citations

Electrical Engineering, Solid-state Lighting, Engineering +14

1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate

T. Wang, Y. H. Liu, Y. B. Lee et al. · Applied Physics Letters · 2002 · 98 citations

Optical Materials, Engineering, Enhanced Exciton-localization Effect +18

Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate

T. Wang, Y. Ohno, M. Lachab et al. · Applied Physics Letters · 1999 · 68 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures

T. Wang, Hisayuki Saeki, Jie Bai et al. · Applied Physics Letters · 2000 · 65 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14