A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 924 citations

Engineering, Thick Gan Layers, Optoelectronic Devices +18

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 730 citations

Semiconductor Technology, Photonics, Electrical Engineering +12

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva et al. · Applied Physics Letters · 1997 · 651 citations

Materials Science, Materials Engineering, High Density +13

Anisotropic epitaxial lateral growth in GaN selective area epitaxy

D. Kapolnek, S. Keller, R. Vetury et al. · Applied Physics Letters · 1997 · 299 citations

Wide-bandgap Semiconductor, Epitaxial Growth, Applied Physics +5

A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate

T Wang, Y. Morishima, N Naoi et al. · Journal of Crystal Growth · 2000 · 41 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +11