Dislocation Mobility

Dislocation Mobility is a material property that quantifies the ease with which dislocations move through a crystalline lattice under applied stress, distinguishing it from other deformation mechanisms by its dependence on dislocation-line velocity and stress-induced glide in semiconductor crystals.

837

Publications

45.8K

Citations

2.1K

Authors

665

Institutions

Publications per year

2017–2026

114

Authors

2.1K

  1. IY
    Ichiro Yonenaga

    Tohoku University, Japan

    13 publications · 474 citations

    13

    h-index

  2. VV
    Vasily V. Bulatov

    Lawrence Livermore National Laboratory, United States

    12 publications · 1.1K citations

    12

    h-index

  3. TV
    T. Vreeland

    California Institute of Technology, United States

    12 publications · 590 citations

    11

    h-index

  4. DC
    D. Caillard

    Centre National de la Recherche Scientifique, France

    11 publications · 268 citations

    11

    h-index

  5. GV
    G. Vanderschaeve

    Centre National de la Recherche Scientifique, France

    9 publications · 213 citations

    9

    h-index

1–5 of 2.1K

Venues

  1. Journal of Applied Physics

    82 publications · 5.5K citations

    38

    h-index

  2. Acta Materialia

    35 publications · 2.2K citations

    27

    h-index

  3. 26

    h-index

  4. Physical Review Letters

    PRL · 24 publications · 1.9K citations

    23

    h-index

  5. Acta Metallurgica

    24 publications · 1.9K citations

    21

    h-index

1–5