Y. Morishima

A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE

Shigeki Sakai, T Wang, Y. Morishima et al. · Journal of Crystal Growth · 2000 · 118 citations

Materials Science, Materials Engineering, Electrical Engineering +9

High optical and structural quality of GaN epilayers grown on (2¯01) β-Ga2O3

Mufasila Mumthaz Muhammed, M. Peres, Yoshiyuki Yamashita et al. · Applied Physics Letters · 2014 · 78 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

V-shaped defects in InGaN/GaN multiquantum wells

Sourindra Mahanty, M. Hao, T. Sugahara et al. · Materials Letters · 1999 · 55 citations

Engineering, Physics, Applied Physics +5

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Idris A. Ajia, Yuichi Yamashita, K. Lorenz et al. · Applied Physics Letters · 2018 · 50 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate

T Wang, Y. Morishima, N Naoi et al. · Journal of Crystal Growth · 2000 · 41 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +11