M. Hao

Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization

M. Hao, Jianping Zhang, X. H. Zhang et al. · Applied Physics Letters · 2002 · 66 citations

Different Degree, Photonics, Wide-bandgap Semiconductor +14

V-shaped defects in InGaN/GaN multiquantum wells

Sourindra Mahanty, M. Hao, T. Sugahara et al. · Materials Letters · 1999 · 55 citations

Engineering, Physics, Applied Physics +5

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao, H. Ishikawa, Takashi Egawa et al. · Applied Physics Letters · 2003 · 46 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

J. Wang, M Nozaki, M. Lachab et al. · Applied Physics Letters · 1999 · 38 citations

Engineering, Chemistry, Chemical Deposition +21

Reduction of threading dislocations in AlGaN layers grown on AlN∕sapphire templates using high-temperature GaN interlayer

H. X. Jiang, Takashi Egawa, M. Hao et al. · Applied Physics Letters · 2005 · 35 citations

Materials Science, Materials Engineering, High-temperature Gan Interlayer +14