Concepedia

H. Ishikawa

HI

Statistics

Publications

9

Citations

284

H-Index

9

Active since

1989

Affiliations

Nagoya Institute of Technology(Current)

Fujitsu (Japan)

H. Ishikawa is an author at Nagoya Institute of Technology specializing in materials science, electronic materials, and engineering.

Publications per year

1989–2006

9

Publications

9

Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

Takashi Egawa, H. Ishikawa, M. Umeno et al. · Applied Physics Letters · 2000 · 76 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

M. Hao, H. Ishikawa, Takashi Egawa et al. · Applied Physics Letters · 2003 · 48 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate

Y. Liu, H. X. Jiang, S. Arulkumaran et al. · Applied Physics Letters · 2005 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si

H. Ishikawa, K. Asano, B. Zhang et al. · physica status solidi (a) · 2004 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Origin of <i>n</i>-type conduction at the interface between epitaxial-grown layer and InP substrate and its suppression by heating in phosphine atmosphere

H. Ishikawa, Shiro Miwa, Toshiyuki Maruyama et al. · Journal of Applied Physics · 1992 · 26 citations

Engineering, Materials Engineering, Materials Science +17

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