Daigo Kikuta

Statistics

Publications

Citations

501

H-Index

Active since

2003

Affiliations

Toyota Central Research and Development Laboratories (Japan)(Current)

Tokushima University

Nagoya University

Japan Science and Technology Agency

Hokkaido University

Daigo Kikuta is an author at Toyota Central Research and Development Laboratories (Japan) specializing in engineering, applied physics, and electrical engineering.

ORCID

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMaterial ScienceSemiconductorsMicroelectronicsSurface SciencePhysicsThin FilmsElectronic Devices

Publications per year

2003–2023

Publications

Copper gate AlGaN/GaN HEMT with low gate leakage current

Jin‐Ping Ao, Daigo Kikuta, Naotaka Kubota et al. · IEEE Electron Device Letters · 2003 · 74 citations

Materials Science, Semiconductors, Electrical Engineering +11

Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Daigo Kikuta, Kenji Itoh, Tetsuo Narita et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2016 · 62 citations

Engineering, Sio2 Content, Gate Oxide +17

Study of etching‐induced damage in GaN by hard X‐ray photoelectron spectroscopy

Tetsuo Narita, Daigo Kikuta, Naoko Takahashi et al. · physica status solidi (a) · 2011 · 46 citations

Wide-bandgap Semiconductor, Engineering, Surface Layer +16

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

Daigo Kikuta, Kenji Ito, Tetsuo Narita et al. · Applied Physics Express · 2019 · 45 citations

Wide-bandgap Semiconductor, Post-deposition Annealing, Electrical Engineering +10

Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit

Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki et al. · IEEE Transactions on Industry Applications · 2014 · 42 citations

Wide-bandgap Semiconductor, Engineering, Gan Hemt +16

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