Kenji Ito

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

Daigo Kikuta, Kenji Ito, Tetsuo Narita et al. · Applied Physics Express · 2019 · 45 citations

Wide-bandgap Semiconductor, Post-deposition Annealing, Electrical Engineering +10

Band offset of Al₁₋<i>_x</i>Si<i>_x</i>O<i>_y</i>mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy

Kenji Ito, Daigo Kikuta, Tetsuo Narita et al. · Japanese Journal of Applied Physics · 2017 · 28 citations

Materials Science, Semiconductors, Electrical Engineering +12

Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

Masashi Kato, Takato Asada, Takuto Maeda et al. · Journal of Applied Physics · 2021 · 23 citations

Semiconductors, Wide-bandgap Semiconductor, Photoluminescence +11

Over 200 cm² V⁻¹ s⁻¹ of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface

Kenji Ito, Shiro Iwasaki, Kazuyoshi Tomita et al. · Applied Physics Express · 2023 · 23 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

Kenji Ito, Kazuyoshi Tomita, Daigo Kikuta et al. · Journal of Applied Physics · 2021 · 21 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10