Applied Physics Express · 2023 · 31 citations · 27 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAtomic Layer DepositionCarrier TransportMetal-oxide-semiconductor Field-effect TransistorsSemiconductor InterfacesSemiconductor PhysicsWide-bandgap Semiconductor DevicesAluminum Nitride DevicesAtomic Layer Deposition PrecursorsElectron MobilityGallium Nitride (Gan) MaterialsHigh-electron-mobility TransistorsMobility AnalysisMobility OptimizationTraps
Abstract By controlling a metal-oxide-semiconductor interface of an AlSiO/GaN system, the electron inversion channel mobility was significantly improved to 229 cm 2 V −1 s −1 in a field-effect transistor. A 3 nm thick AlN interlayer formed by atomic layer deposition effectively suppressed the oxidation of the GaN surface and reduced the border traps, resulting in high channel mobility. An additional nitrogen radical treatment before AlN deposition further improved the subthreshold slope and the channel mobility, which was consistent with the lower charged defects extracted from the mobility analysis in the low effective normal field region.
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