Traps

Traps is a defect or impurity state within the bandgap of a semiconductor material that captures and temporarily immobilizes charge carriers, thereby altering the electrical properties of the semiconductor by acting as a non-radiative recombination center or carrier trapping site.

12.6K

Publications

577.3K

Citations

36.8K

Authors

5.8K

Institutions

Publications per year

2017–2026

2.1K

Authors

36.8K

  1. AY
    A. Y. Polyakov

    University of Florida, United States

    58 publications · 2.3K citations

    28

    h-index

  2. NB
    N. B. Smirnov

    University of Florida, United States

    53 publications · 1.8K citations

    27

    h-index

  3. DM
    Daniel M. Fleetwood

    Vanderbilt University, United States

    36 publications · 3K citations

    27

    h-index

  4. SJ
    S. J. Pearton

    University of Florida, United States

    58 publications · 2.1K citations

    27

    h-index

  5. GG
    G. Groeseneken

    IMEC, Belgium

    41 publications · 1.3K citations

    24

    h-index

1–5 of 36.8K

Venues

  1. Journal of Applied Physics

    732 publications · 41.1K citations

    90

    h-index

  2. Applied Physics Letters

    575 publications · 30.6K citations

    84

    h-index

  3. Physical Review A

    PRA · 228 publications · 13K citations

    63

    h-index

  4. IEEE Transactions on Electron Devices

    286 publications · 14.6K citations

    62

    h-index

  5. Physical Review Letters

    PRL · 135 publications · 15.1K citations

    61

    h-index

1–5