Nobuyuki Ikarashi

Progress on and challenges of p-type formation for GaN power devices

Tetsuo Narita, Hikaru Yoshida, Kazuyoshi Tomita et al. · Journal of Applied Physics · 2020 · 113 citations

Engineering, Materials Engineering, Materials Science +17

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Jia Wang, Wentao Cai, Weifang Lu et al. · Nature · 2024 · 76 citations · Full text

Engineering, Materials Science, Physics +12

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Tetsuo Narita, Nobuyuki Ikarashi, Kazuyoshi Tomita et al. · Journal of Applied Physics · 2018 · 60 citations

Engineering, Materials Engineering, Materials Science +16

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

Hideki Sakurai, Tetsuo Narita, Masato Omori et al. · Applied Physics Express · 2020 · 59 citations

Engineering, Materials Engineering, Materials Science +10

Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-sificidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices

Kazutoshi Takahashi, Kei Manabe, Taeko Ikarashi et al. · 2005 · 58 citations

Engineering, Electrical Engineering, Materials Science +16