Zenji Yatabe

Insulated gate and surface passivation structures for GaN-based power transistors

Zenji Yatabe, Joel T. Asubar, Tamotsu Hashizume · Journal of Physics D Applied Physics · 2016 · 206 citations · Full text

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

Yuichi Hori, Zenji Yatabe, Tamotsu Hashizume · Journal of Applied Physics · 2013 · 170 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Tamotsu Hashizume, Kenya Nishiguchi, Shota Kaneki et al. · Materials Science in Semiconductor Processing · 2017 · 146 citations · Full text

Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

Joel T. Asubar, Zenji Yatabe, D. Gregušová et al. · Journal of Applied Physics · 2021 · 118 citations · Full text

Wide-bandgap Semiconductor, Engineering, Surface/interface States +19

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Shota Kaneki, Joji Ohira, Shota Toiya et al. · Applied Physics Letters · 2016 · 96 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Low-state-density Al2o3/gan Interfaces +16