Kenji Itoh

Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

Theeradetch Detchprohm, Kazumasa Hiramatsu, Kenji Itoh et al. · Japanese Journal of Applied Physics · 1992 · 268 citations

Wide-bandgap Semiconductor, Relaxation Process, Engineering +16

Chiral Ruthenium(II)–Bis(2-oxazolin-2-yl)pyridine Complexes. Asymmetric Catalytic Cyclopropanation of Olefins and Diazoacetates

Hisao Nishiyama, Yoshiki Itoh, Yuji Sugawara et al. · Bulletin of the Chemical Society of Japan · 1995 · 250 citations

Pyridine Catalyst, Inorganic Chemistry, Chemical Engineering +14

Growth of single crystal GaN substrate using hydride vapor phase epitaxy

Kouichi Naniwae, Shigetoshi Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1990 · 176 citations

Materials Science, Engineering, Applied Physics +2

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Masakazu Kanechika, M. Sugimoto, Narumasa Soejima et al. · Japanese Journal of Applied Physics · 2007 · 169 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +8

Effect of AlN Buffer Layer on AlGaN/α-Al₂O₃Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy

Yasuo Koide, Nobuo Itoh, Kenji Itoh et al. · Japanese Journal of Applied Physics · 1988 · 110 citations

Aluminium Nitride, Engineering, Crystal Growth Technology +17